The third-generation wide band gap semiconductor materials are represented by silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond and aluminum nitride (AlN), which are applied mainly in semiconductor lighting, power electronics, laser and probing equipment and other fields; each filed is on a different phase of development. In the cutting-edge research fields, the wide band gap semiconductor is still in lab research stage and in the future will see wide applications in photoelectronic components, power electronics fields, etc. Its excellent performance will enable it to play a significant role in multiple modern industries with huge market potential and prospects in the future.

As China's most professional, well-known and authentic MEMS exhibition, CHINA MEMS 2021 achieved great success. Most audiences were engaged in the fields of semiconductors, automobiles, electronics manufacturing, consumer electronics, military industry, aerospace, sensors, Internet of Things, etc. The conference attracted the professional audiences came from 30 countries and regions. Meanwhile, the World-famous MEMS application and manufacturing contractors, equipment manufacturers, MEMS key lab experts and 863 Project MEMS experts have attended this exhibition and high-level workshop.